Product Summary
The FGH40N6S2D is a Field Stop IGBT using Novel Field Stop IGBT Technology. It offers the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
Parametrics
FGH40N6S2D absolute maximum ratings: (1)VCES, Collector to Emitter Voltage: 600 V; (2)VGES, Gate to Emitter Voltage: ± 20 V; (3)IC: Collector Current @ TC = 25℃: 80 A; Collector Current @ TC = 100℃: 40 A; (4)ICM, Pulsed Collector Current @ TC = 25℃: 120 A; (5)PD: Maximum Power Dissipation @ TC = 25℃: 290 W; Maximum Power Dissipation @ TC = 100℃: 116W; (6)TJ, Operating Junction Temperature: -55 to +150 ℃; (7)Tstg, Storage Temperature Range: -55 to +150 ℃; (8) TL, Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds: 300 ℃.
Features
FGH40N6S2D features: (1) High current capability; (2) Low saturation voltage: VCE (sat) =2.3V @ IC = 40A; (3) High input impedance; (4) Fast switching; (5) RoHS compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FGH40N6S2D |
Fairchild Semiconductor |
IGBT Transistors Comp 600V N-Ch |
Data Sheet |
Negotiable |
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FGH40N60SF |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
FGH40N60SFDTU |
Fairchild Semiconductor |
IGBT Transistors 600V 40A Field Stop |
Data Sheet |
|
|
|||||||||||||
FGH40N60SFTU |
Fairchild Semiconductor |
IGBT Transistors N-CH / 40A 600V FS Planar |
Data Sheet |
|
|
|||||||||||||
FGH40N60SMD |
Fairchild Semiconductor |
IGBT Transistors 600V, 40A Field Stop IGBT |
Data Sheet |
|
|
|||||||||||||
FGH40N60SMDF |
Fairchild Semiconductor |
IGBT Transistors 600V/40A Field Stop IGBT ver. 2 |
Data Sheet |
|
|
|||||||||||||
FGH40N60UF |
Other |
Data Sheet |
Negotiable |
|