(Hong Kong)
Product Summary
The BSM300GA120DLCS E3226 is an IGBT module.
Parametrics
BSM300GA120DLCS E3226 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200 V; (2)DC-collector current TC = 25℃ IC: 570 A; (3)repetitive peak collector current tP = 1 ms, TC = 80℃ ICRM: 600 A; (4)total power dissipation TC=25℃, Transistor Ptot: 2270 W; (5)gate-emitter peak voltage VGES: +/- 20V; (6)DC forward current IF: 300 A; (7)repetitive peak forw. current tP = 1 ms IFRM: 600 A; (8)insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL: 2,5 kV.
Features
BSM300GA120DLCS E3226 features: (1)Manufacturer: Infineon; (2)Product Category: IGBT Modules; (3)RoHS: No; (4)Product: IGBT Silicon Modules; (5)Configuration: Single Dual Emitter; (6)Collector- Emitter Voltage VCEO Max: 1200 V; (7)Collector-Emitter Saturation Voltage: 2.6 V; (8)Continuous Collector Current at 25℃: 570 A; (9)Gate-Emitter Leakage Current: 400 nA; (10)Power Dissipation: 2250 W; (11)Maximum Operating Temperature: + 125℃; (12)Package / Case: 62MM; (13)Maximum Gate Emitter Voltage: +/- 20 V; (14)Minimum Operating Temperature: - 40℃; (15)Mounting Style: Screw; (16)Factory Pack Quantity: 500.
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