(Hong Kong)
Product Summary
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for industrial and military
applications in the HF/VHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT121 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to 'General' section for further
information.
Features
? High power gain
? Low intermodulation distortion
? Easy power control
? Good thermal stability
? Withstands full load mismatch.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLF247B |
Other |
|
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||
|
BLF202 |
Other |
|
Data Sheet |
Negotiable |
|
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 |
BLF202 T/R |
NXP Semiconductors |
Transistors RF MOSFET Power TAPE-7 TNS-RFPR |
Data Sheet |
Negotiable |
|
||||||||
|
BLF202,115 |
NXP Semiconductors |
Transistors RF MOSFET Power TAPE-7 TNS-RFPR |
Data Sheet |
|
|
||||||||
|
BLF2022-120 |
Other |
|
Data Sheet |
Negotiable |
|
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|
BLF2022-125 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
|
BLF2022-30 |
Other |
|
Data Sheet |
Negotiable |
|
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