Product Summary

The 2mbi150us-120-50 is an IGBT module.

Parametrics

2mbi150us-120-50 absolute maximum ratings: (1)Collector-Emitter voltage: 1200V; (2)Gate-Emitter voltage: ±20V; (3)Collector current: 200A; (4)Collector Power Dissipation: 780W; (5)Junction temperature: 150℃; (6)Storage temperature: -40 to 125℃.

Features

2mbi150us-120-50 features: (1)Zero gate voltage collector current: 2mA; (2)Gate-Emitter leakage current: 400nA; (3)Gate-Emitter threshold voltage: 6.5V; (4)Input capacitance: 17nF; (5)Reverse recovery time: 0.35us.

Diagrams

2mbi150us-120-50 block diagram