Product Summary

The 2MBI300U4H-120-50 is an insulated gate bipolar transistor.

Parametrics

2MBI300U4H-120-50 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 1200V; (2)Gate -Emitter Voltage, VGES: ±20V; (3)Collector Current: Continuous: Tc=25℃ IC: 400A; Tc=80℃, IC: 300A; 1ms: Tc=25℃, Icp: 800A; Tc=80℃, Icp: 600A; -IC: 300A; 1ms, -Ic pulse: 600A; (4)Collector Power Dissipation, 1 device, Pc:1470W; (5)Junction Temperature, Tj: +150 ℃; (6)Storage Temperature, Tstg: －40 to +125 ℃; (7)Isolation Voltage, between terminal and copper base, AC: 1min., Viso: 2500 VAC; (8)Screw Torque, Mounting: 3.5Nm; Terminals: 4.5Nm.

Features

2MBI300U4H-120-50 features: (1)Square RBSOA; (2)Low saturation voltage; (3)Less total power dissipation; (4)Improved FWD characteristic; (5)Minimized internal stray inductance; (6)Overcurrent limiting function (~3 times rated current).

Diagrams

2MBI300U4H-120-50 circuit diagram