(Hong Kong)
Product Summary
2MBI100N-120 is an IGBT module. The applications of the 2MBI100N-120 include High Power Switching, A.C. Motor Controls, D.C. Motor Controls and Uninterruptible Power Supply.
Parametrics
2MBI100N-120 absolute maximum ratings: (1)Collector-Emitter Voltage: 1200 V; (2)Gate-Emitter Voltage: ±20 V; (3)Collector Current: 100 A; (4)Max. Power Dissipation: 780 W; (5)Operating Temperature: +150 ℃; (6)Storage Temperature: -40 to +125 ℃.
Features
2MBI100N-120 features: (1)Square RBSOA; (2)Low Saturation Voltage; (3)Less Total Power Dissipation; (4)Improved FWD Characteristic; (5)Minimized Internal Stray Inductance; (6)Over current Limiting Function (4~5 Times Rated Current).
Diagrams
