(Hong Kong)
Product Summary
The PESD5V0V1BB,115 is a low capacitance bidirectional ESD protection diode in ultra small SMD plastic packages designed to protect one signal line from the damage caused by ESD and other transients.
Parametrics
PESD5V0V1BB,115 absolute maximum ratings: (1)peak pulse power: 130 W min at 8/20 μs; (2)peak pulse current : 12 A min at 8/20 μs; (3)junction temperature: 150 ℃; (4)ambient temperature: -65 +150 ℃; (5)storage temperature: -65 +150 ℃.
Features
PESD5V0V1BB,115 features: (1)Bidirectional ESD protection of one line; (2)ESD protection > 30 kV; (3)Max. peak pulse power: PPP = 130 W; (4)IEC 61000-4-2, level 4 (ESD); (5)Low clamping voltage: V(CL)R = 14 V; (6)IEC 61000-4-5 (surge); IPP = 12 A; (7)Ultra low leakage current: IRM = 5 nA; (8)Ultra small SMD plastic packages.
Diagrams
| Image | Part No | Mfg | Description |  |
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 PESD5V0V1BB,115 |
NXP Semiconductors |
ESD Suppressors DIODE BI ESD PROTECT |
Data Sheet |
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