Product Summary

The 1SS383 is a silicon epitaxial schottky barrier type diode.

Parametrics

1SS383 absolute maximum ratings: (1)maximum (peak) reverse votlage, VRM: 45V; (2)reverse votlage, VR: 40V; (3)maximum (peak) forward current, IFM: 300mA; (4)average forward current, IO: 100mA; (5)surge current (10ms), IFSM: 1A; (6)power dissipation, P: 100mW; (7)junction temperature, Tj: 125℃; (8)storage temperature range, Tstg: -55 to 125℃; (9)operating temperature range, Topr: -40 to 100℃.

Features

1SS383 features: (1)small package; (2)composed of 2 independent diodes; (3)low forward voltage: VF(3)=0.54V typ; (4)low reverse current: IR=5μA max.

Diagrams

1SS383 pin assignment

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
1SS383
1SS383

Other


Data Sheet

Negotiable 
1SS383T1
1SS383T1

Other


Data Sheet

Negotiable 
1SS383T1G
1SS383T1G


DIODE SCHOTTKY DUAL 40V SC82

Data Sheet

Negotiable