(Hong Kong)
Product Summary
The 1SS383 is a silicon epitaxial schottky barrier type diode.
Parametrics
1SS383 absolute maximum ratings: (1)maximum (peak) reverse votlage, VRM: 45V; (2)reverse votlage, VR: 40V; (3)maximum (peak) forward current, IFM: 300mA; (4)average forward current, IO: 100mA; (5)surge current (10ms), IFSM: 1A; (6)power dissipation, P: 100mW; (7)junction temperature, Tj: 125℃; (8)storage temperature range, Tstg: -55 to 125℃; (9)operating temperature range, Topr: -40 to 100℃.
Features
1SS383 features: (1)small package; (2)composed of 2 independent diodes; (3)low forward voltage: VF(3)=0.54V typ; (4)low reverse current: IR=5μA max.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 1SS383 |
Other |
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Data Sheet |
Negotiable |
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1SS383T1 |
Other |
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Data Sheet |
Negotiable |
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1SS383T1G |
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DIODE SCHOTTKY DUAL 40V SC82 |
Data Sheet |
Negotiable |
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