(Hong Kong)
Product Summary
HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage
applications
■ NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
■ SUPPLY VOLTAGE
– 1.8V device: VDD = 1.7 to 1.95V
– 3.0V device: VDD = 2.7 to 3.6V
Features
HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage
applications
■ NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
■ SUPPLY VOLTAGE
– 1.8V device: VDD = 1.7 to 1.95V
– 3.0V device: VDD = 2.7 to 3.6V
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 NAND128W3A2BN6E |
STMicroelectronics |
Flash NAND 128 MEG |
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
NAND R |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
NAND S |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
NAND01G-A |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
NAND01G-AAZ3E |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
NAND01G-B |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
NAND01G-B2B |
Other |
|
Data Sheet |
Negotiable |
|
||||
