Product Summary
The JS28F00AM29EWHA is an asynchronous, uniform block, parallel NOR Flash memory device manufactured on 65nm multilevel cell (MLC) technology. The JS28F00AM29EWHA supports asynchronous random read and page read from all blocks of the array. The JS28F00AM29EWHA also features an internal program buffer that improves throughput by programming 512 words via one command sequence.
Parametrics
JS28F00AM29EWHA absolute maximum ratings: (1) Temperature under bias TBIAS: -50 to 125°C; (2) Storage temperature Tstg: -65 to 150°C; (3) Input/output voltage VIO: -0.6 to Vcc +0.6V; (4) Supply voltage Vcc: -0.6 to 4V; (5) Input/output supply voltage VCCQ: -0.6 to 4V; (6) Program voltage VPPH: -0.6 to 14.5V.
Features
JS28F00AM29EWHA features: (1) 2Gb=stacked device (two 1Gb die) ; (2) Asynchronous random/page read; (3) Buffer program: 512-word program buffer; (4) Program/erase suspend and resume capability; (5) BLANK CHECK operation to verify an erased block; (6) Unlock bypass, block erase, chip erase, and write to buffer capability; (7) Low power consumption: Standby mode; (8) Green packages available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||
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JS28F00AM29EWHA |
IC FLASH 1GBIT M29EW 56TSOP |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||
JS28F00AM29EWH0 |
IC FLASH 1GBIT 110NS 56TSOP |
Data Sheet |
Negotiable |
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JS28F00AM29EWHA |
IC FLASH 1GBIT M29EW 56TSOP |
Data Sheet |
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JS28F00AM29EWL0 |
IC FLASH 1GBIT 110NS 56TSOP |
Data Sheet |
Negotiable |
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JS28F00AM29EWLA |
IC FLASH 1GBIT M29EW 56TSOP |
Data Sheet |
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JS28F00AP30BFA |
IC FLASH 1GBIT P30 65NM 56TSOP |
Data Sheet |
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JS28F00AP30EF0 |
IC FLASH 1GBIT 110NS 56TSOP |
Data Sheet |
Negotiable |
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