Product Summary
The FP31QF-F is a high performance 2-Watt HFET (Heterostructure FET) in a low-cost lead-free 28-pin 6x6 mm QFN (Quad Flatpack, No-Lead) surface-mount package. This device works optimally at a drain bias of +9 V and 450 mA to achieve +46 dBm output IP3 performance and an output power of +34 dBm at 1-dB compression. Applications include Mobile Infrastructure, CATV / DBS, W-LAN / ISM, RFID, Defense / Homeland Security and Fixed Wireless.
Parametrics
FP31QF-F absolute maximum ratings: (1)Operating Case Temperature: -40 to +85℃; (2)Storage Temperature: -55 to +125℃ ; (3)DC Power: 7.5 W; (4)RF Input Power (continuous): 6 dB above Input P1dB; (5)Drain to Gate Voltage: +14 V ; (6)Junction Temperature: +220℃.
Features
FP31QF-F features: (1)50-4000 MHz ; (2)18 dB Gain@900 MHz ; (3)+34 dBm P1dB ; (4)+46 dBm Output IP3 ; (5)High Drain Efficiency ; (6)Pb-free 6mm 28-pin QFN package ; (7)MTTF > 100 years.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FP31QF-F |
TriQuint Semiconductor |
RF Amplifier 50-4000MHz +34dBm P1dB |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||
FP31QF |
Other |
Data Sheet |
Negotiable |
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FP31QF-F |
TriQuint Semiconductor |
RF Amplifier 50-4000MHz +34dBm P1dB |
Data Sheet |
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FP31QF-PCB1900 |
TriQuint Semiconductor |
RF Development Tools 1900MHz Eval Brd 13.5dB Gain |
Data Sheet |
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FP31QF-PCB2140 |
TriQuint Semiconductor |
RF Development Tools 2140MHz Eval Brd 13dB Gain |
Data Sheet |
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FP31QF-PCB900 |
TriQuint Semiconductor |
RF Development Tools 900MHz Eval Brd 18dB Gain |
Data Sheet |
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FP312L100 |
Other |
Data Sheet |
Negotiable |
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