Product Summary

The BC858B-E9 is a PNP General Purpose Transistor.

Parametrics

BC858B-E9 absolute maximum ratings: (1)VCES Collector-Emit ter Voltage (VBE = 0): -30 V; (2)VCBO Collector-Base Voltage (IE = 0): -30 V; (3)VCEO Collector-Emit ter Voltage (IB = 0): -30 V; (4)VEBO Emitter-Base Voltage (IC = 0): -5 V; (5)IC Collector Current: -0.1 A; (6)ICM Collector Peak Current: -0.2 A; (7)IBM Base Peak Current: -0.2 A; (8)IEM Emitter Peak Current: -0.2 A; (9)Ptot Total Dissipation at Tc = 25 ℃: 300 mW; (10)Tstg Storage Temperature: -65 to 150 ℃; (11)Tj Max. Operating Junction Temperature: 150 ℃.

Features

BC858B-E9 features: (1)silicon epitaxial planar pnp transistors; (2)miniature plastic package for application in surface mounting circuits; (3)very low noise af amplifier.

Diagrams

BC858B-E9 INTERNAL SCHEMATIC DIAGRAM

BC850ALT1
BC850ALT1
Other

Data Sheet
Negotiable 
BC850AMTF
BC850AMTF
Fairchild Semiconductor
Transistors Bipolar (BJT) SOT-23 NPN GP AMP
Data Sheet
0-1: $0.04
1-25: $0.03
25-100: $0.02
100-250: $0.02
BC850AMTF_Q
BC850AMTF_Q
Fairchild Semiconductor
Transistors Bipolar (BJT) SOT-23 NPN GP AMP
Data Sheet
0-1: $0.02
1-25: $0.01
25-100: $0.01
100-250: $0.01
BC850ATA
BC850ATA
Diodes Inc. / Zetex
Transistors Bipolar (BJT) -
Data Sheet
Negotiable 
BC850ATC
BC850ATC
Diodes Inc. / Zetex
Transistors Bipolar (BJT) -
Data Sheet
Negotiable 
BC850B
BC850B
Fairchild Semiconductor
Transistors Bipolar (BJT) SOT-23 NPN GP AMP
Data Sheet
Negotiable