(Hong Kong)
Product Summary
The EDJ4216EFBG-GN-F is a 4G bits DDR3L SDRAM.
Parametrics
EDJ4216EFBG-GN-F absolute maximum ratings: (1)Power supply voltage VDD: -0.4 to +1.975 V; (2)Power supply voltage for output VDDQ: -0.4 to +1.975 V; (3)Input voltage VIN: -0.4 to +1.975 V; (4)Output voltage VOUT: -0.4 to +1.975 V; (5)Reference voltage VREFCA: -0.4 to 0.6 × VDD V; (6)Reference voltage for DQ VREFDQ: -0.4 to 0.6 × VDDQ V; (7)Storage temperature Tstg: -55 to +100 °C; (8)Power dissipation PD: 1.0 W; (9)Short circuit output current IOUT: 50 mA.
Features
EDJ4216EFBG-GN-F features: (1)Double-data-rate architecture: two data transfers per clock cycle; (2)The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture; (3)Bi-directional differential data strobe (DQS and /DQS)is transmitted/received with data for capturing data at the receiver; (4)DQS is edge-aligned with data for READs; centeraligned with data for WRITEs; (5)Differential clock inputs (CK and /CK); (6)DLL aligns DQ and DQS transitions with CK transitions; (7)Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS; (8)Data mask (DM)for write data; (9)Posted /CAS by programmable additive latency for better command and data bus efficiency.
Diagrams
