Product Summary

The 2SB1669(0)-Z0E1 is an PNP silicon epitaxial transistor that can be directly driven from the output of an IC. The 2SB1669(0)-Z0E1 is ideal for OA and FA equipment such as motor and solenoid drivers.

Parametrics

2SB1669(0)-Z0E1 absolute maximum ratings: (1)Collector to base voltage: -60 V; (2)Collector to emitter voltage VCEO: -60 V; (3)Emitter to base voltage VEBO: -7.0 V; (4)Collector current (DC) IC(DC): -3.0 A; (5)Collector current (pulse) IC(pulse): -6.0 A; (6)Base current (DC) IB(DC): -1.0 A; (7)Total power dissipation PT: 25 W; (8)Junction temperature Tj: 150 ℃; (9)Storage temperature Tstg: -55 to +150 ℃.

Features

2SB1669(0)-Z0E1 features: (1)High DC current amplifier rate hFE . 100 (VCE = -5.0 V, IC = -0.5 A); (2)Z type available for surface mounting supported prodcuts.

Diagrams

2SB1669(0)-Z0E1 diagram

2SB1000
2SB1000

Other


Data Sheet

Negotiable 
2SB1000A
2SB1000A

Other


Data Sheet

Negotiable 
2SB1001
2SB1001

Other


Data Sheet

Negotiable 
2SB1002
2SB1002

Other


Data Sheet

Negotiable 
2SB1005
2SB1005

Other


Data Sheet

Negotiable 
2SB1007
2SB1007

Other


Data Sheet

Negotiable