Product Summary
The 2SB1669(0)-Z0E1 is an PNP silicon epitaxial transistor that can be directly driven from the output of an IC. The 2SB1669(0)-Z0E1 is ideal for OA and FA equipment such as motor and solenoid drivers.
Parametrics
2SB1669(0)-Z0E1 absolute maximum ratings: (1)Collector to base voltage: -60 V; (2)Collector to emitter voltage VCEO: -60 V; (3)Emitter to base voltage VEBO: -7.0 V; (4)Collector current (DC) IC(DC): -3.0 A; (5)Collector current (pulse) IC(pulse): -6.0 A; (6)Base current (DC) IB(DC): -1.0 A; (7)Total power dissipation PT: 25 W; (8)Junction temperature Tj: 150 ℃; (9)Storage temperature Tstg: -55 to +150 ℃.
Features
2SB1669(0)-Z0E1 features: (1)High DC current amplifier rate hFE . 100 (VCE = -5.0 V, IC = -0.5 A); (2)Z type available for surface mounting supported prodcuts.
Diagrams
2SB1000 |
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Negotiable |
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2SB1000A |
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2SB1001 |
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Negotiable |
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2SB1002 |
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2SB1005 |
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Negotiable |
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2SB1007 |
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Negotiable |
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