AH212-S8G

two-stage driver amplifier, high dynamic range, 2200 MHz, +46 dBm, SOIC

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Price:: US $0.30~0.50 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 1000 :	0.50 / Piece
1001 ~ 10000 :	0.40 / Piece
10001 ~ 100000 :	0.30 / Piece

PartNumber:: AH212-S8G

Brand:: TriQuint Semiconductor - TriQuint | Pack: SOIC | D/C: 13+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-18

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Part Number:AH212-S8G
US $0.30 - 0.50
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piece

Product Summary

The AH212-S8G is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +30 dBm of compressed 1-dB power. The amplifier is housed in an industry-standard SMT lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The product is targeted for use as linear driver amplifier for various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, and UMTS, where high linearity and high power is required. The internal active bias allows the AH212-S8G to maintain high linearity over temperature and operate directly off a +5 V supply. Applications include mobile Infrastructure and etc.

Parametrics

AH212-S8G absolute maximum ratings: (1)Operating Case Temperature: -40 to +85℃; (2)Storage Temperature: -65 to +150℃; (3)RF Input Power (continuous): +26 dBm; (4)Device Voltage: +7 V; (5)Device Current: 900 mA; (6)Device Power: 6 W; (7)Junction Temperature: +250℃.

Features

AH212-S8G features: (1)1800-2200 MHz; (2)26 dB Gain; (3)+30 dBm P1dB; (4)+46 dBm Output IP3; (5)+5V Single Positive Supply; (6)Internal Active Bias; (7)Lead-free/green/RoHS-compliant SOIC-8 Package.