Product Summary
The ntms10p02r2g is a Power MOSFET. Applications of the ntms10p02r2g are Power Management in Portable and Battery-Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards.
Parametrics
ntms10p02r2g absolute maximum ratings: (1)Drain-to-Source Voltage VDSS: 20 Vdc; (2)Gate-to-Source Voltage -Continuous VGS: 12 Vdc; (3)Total Power Dissipation @ TA = 25°C: 2.5W; (4)Maximum Operating Drain Current: -5.5A; (5)Operating and Storage: -55 to +150 °C.
Features
ntms10p02r2g features: (1)Ultra Low RDS(on); (2)Higher Efficiency Extending Battery Life; (3)Logic Level Gate Drive; (4)Miniature SO-8 Surface Mount Package; (5)Diode Exhibits High Speed, Soft Recovery; (6)Avalanche Energy Specified; (7)SO-8 Mounting Information Provided.
Diagrams
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![]() NTMS10P02R2G |
![]() ON Semiconductor |
![]() MOSFET 20V 10A P-Channel |
![]() Data Sheet |
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Image | Part No | Mfg | Description | ![]() |
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![]() NTMS10P02R2 |
![]() ON Semiconductor |
![]() MOSFET 20V 10A P-Channel |
![]() Data Sheet |
![]() Negotiable |
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![]() NTMS10P02R2G |
![]() ON Semiconductor |
![]() MOSFET 20V 10A P-Channel |
![]() Data Sheet |
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![]() |
![]() NTMS3P03R2 |
![]() ON Semiconductor |
![]() MOSFET 30V 3.05A P-Channel |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() NTMS3P03R2G |
![]() ON Semiconductor |
![]() MOSFET 30V 3.05A P-Channel |
![]() Data Sheet |
![]() Negotiable |
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![]() NTMS4101PR2 |
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![]() MOSFET P-CH 20V 6.9A 8-SOIC |
![]() Data Sheet |
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![]() NTMS4107N |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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