Product Summary
The ntms10p02r2g is a Power MOSFET. Applications of the ntms10p02r2g are Power Management in Portable and Battery-Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards.
Parametrics
ntms10p02r2g absolute maximum ratings: (1)Drain-to-Source Voltage VDSS: 20 Vdc; (2)Gate-to-Source Voltage -Continuous VGS: 12 Vdc; (3)Total Power Dissipation @ TA = 25°C: 2.5W; (4)Maximum Operating Drain Current: -5.5A; (5)Operating and Storage: -55 to +150 °C.
Features
ntms10p02r2g features: (1)Ultra Low RDS(on); (2)Higher Efficiency Extending Battery Life; (3)Logic Level Gate Drive; (4)Miniature SO-8 Surface Mount Package; (5)Diode Exhibits High Speed, Soft Recovery; (6)Avalanche Energy Specified; (7)SO-8 Mounting Information Provided.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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NTMS10P02R2G |
ON Semiconductor |
MOSFET 20V 10A P-Channel |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
NTMS10P02R2 |
ON Semiconductor |
MOSFET 20V 10A P-Channel |
Data Sheet |
Negotiable |
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NTMS10P02R2G |
ON Semiconductor |
MOSFET 20V 10A P-Channel |
Data Sheet |
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NTMS3P03R2 |
ON Semiconductor |
MOSFET 30V 3.05A P-Channel |
Data Sheet |
Negotiable |
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NTMS3P03R2G |
ON Semiconductor |
MOSFET 30V 3.05A P-Channel |
Data Sheet |
Negotiable |
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NTMS4101PR2 |
MOSFET P-CH 20V 6.9A 8-SOIC |
Data Sheet |
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NTMS4107N |
Other |
Data Sheet |
Negotiable |
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