MRF8S9200N

MRF8S9200N, RF Power field effect transistor, 960 MHz, 70 Vdc, 32 mm, DIP

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.30~0.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 1000 :	0.50 / Piece
1001 ~ 10000 :	0.40 / Piece
10001 ~ 100000 :	0.30 / Piece

PartNumber:: MRF8S9200N

Brand:: Freescale Semiconductor, Inc - Freescale | D/C:

Availability:: Supply Ability: 100000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Ms. mona cao's store

(Hong Kong)

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-06-18

From Other Seller

Part Number:MRF8S9200N
US $0.30 - 0.50
Quantity:

piece

Product Summary

The MRF8S9200N is a RF Power field effect transistor designed for CDMA base station applications with frequencies from 920 to 960 MHz. The MRF8S9200N can be used in Class AB and Class C for all typical cellular base station modulation formats.

Parametrics

MRF8S9200N absolute maximum ratings: (1)Drain--source voltage VDSS: -0.5 to +70 Vdc; (2)Gate-source voltage VGS: -6.0 to +10 Vdc; (3)Operating voltage VDD: 32 to +0 Vdc; (4)Storage temperature range Tstg: -65 to +150 ℃; (5)Case operating temperature TC: 150 ℃; (6)Operating junction temperature (1,2) TJ: 225 ℃.

Features

MRF8S9200N features: (1)Integrated ESD protection; (2)Designed for digital predistortion error correction systems; (3)100% PAR tested for guaranteed output power capability; (4)Characterized with series equivalent large-signal impedance parameters and common source s-parameters; (5)Optimized for doherty applications; (6)RoHS compliant; (7)In tape and reelr1 suffix = 500 units per 32 mm, 13 inch reel.