Product Summary

The MRF8S9200N is a RF Power field effect transistor designed for CDMA base station applications with frequencies from 920 to 960 MHz. The MRF8S9200N can be used in Class AB and Class C for all typical cellular base station modulation formats.

Parametrics

MRF8S9200N absolute maximum ratings: (1)Drain--source voltage VDSS: -0.5 to +70 Vdc; (2)Gate-source voltage VGS: -6.0 to +10 Vdc; (3)Operating voltage VDD: 32 to +0 Vdc; (4)Storage temperature range Tstg: -65 to +150 ℃; (5)Case operating temperature TC: 150 ℃; (6)Operating junction temperature (1,2) TJ: 225 ℃.

Features

MRF8S9200N features: (1)Integrated ESD protection; (2)Designed for digital predistortion error correction systems; (3)100% PAR tested for guaranteed output power capability; (4)Characterized with series equivalent large-signal impedance parameters and common source s-parameters; (5)Optimized for doherty applications; (6)RoHS compliant; (7)In tape and reelr1 suffix = 500 units per 32 mm, 13 inch reel.

Diagrams

MRF8S9200N pin connection

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