Product Summary

The TGF2021-04 is a discrete 4 mm pHEMT which operates from DC-12 GHz. The TGF2021-04 is designed using TriQuint proven standard 0.35um power pHEMT production process. The TGF2021-04 typically provides > 36 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-04 appropriate for high efficiency applications. Applications are (1)Point-to-point radio; (2)High-reliability space; (3)Military; (4)Base stations; (5)Broadband wireless applications.

Parametrics

TGF2021-04 absolute maximum ratings: (1)Positive supply voltage: 12.5 V; (2)Negative supply voltage range: -5 V to 0 V; (3)Positive supply current: 1.8 A; (4)Gate supply current: 28 mA; (5)Input continuous wave power: 31 dBm; (6)Power dissipation: See note 3; (7)Operating channel temperature: 150 °C; (8)Mounting temperature (30 seconds): 320 °C; (9)Storage temperature: -65 to 150 °C.

Features

TGF2021-04 features: (1)Frequency range: DC - 12 GHz; (2)> 36 dBm nominal psat; (3)59% maximum PAE; (4)11 dB nominal power gain; (5)Suitable for high reliability applications; (6)4mm x 0.35m Power pHEMT; (7)Nominal bias Vd = 8-12V, Idq = 300-500mA (Under RF drive, Id rises from 300mA to 960mA); (8)Chip dimensions: 0.57 x 1.30 x 0.10 mm (0.022 x 0.051 x 0.004 in).

Diagrams

TGF2021-04 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
TGF2021-04
TGF2021-04

TriQuint Semiconductor

Transistors RF GaAs DC-12GHz 4mm Pwr pHEMT (0.35um)

Data Sheet

0-200: $10.93
200-400: $10.27
400-600: $9.65
TGF2021-04-SD T/R
TGF2021-04-SD T/R

TriQuint Semiconductor

Power Amplifiers DC-4GHz 5Volts

Data Sheet

0-610: $3.50
610-1000: $3.32
TGF2021-04-SG
TGF2021-04-SG

TriQuint Semiconductor

Power Amplifiers 20-4000MHz Gain 12dB 12.5Volts Pwr 4 dBm

Data Sheet

Negotiable