Product Summary
The PBSS5140T is a vcesat pnp transistor. Applications are: (1)General purpose switching and muting; (2)LCD back lighting; (3)Supply line switching circuits; (4)Battery driven equipment (mobile phones, video cameras and hand-held devices).
Parametrics
PBSS5140T absolute maximum ratings: (1)VCBO collector-base voltage open emitter: -40 V; (2)VCEO collector-emitter voltage open base: -40 V; (3)VEBO emitter-base voltage open collector: -5 V; (4)IC collector current (DC): -1 A; (5)ICM peak collector current: -2 A; (6)IBM peak base current: -1 A; (7)Ptot total power dissipation Tamb ≤ 25 °C; note 1 - 300 mW; Tamb ≤ 25 °C; note 2: 450 mW; (8)Tstg storage temperature: -65 +150 °C; (9)Tj junction temperature: 150 °C; (10)Tamb operating ambient temperature: -65 +150 °C.
Features
PBSS5140T features: (1)Low collector-emitter saturation voltage; (2)High current capabilities; (3)Improved device reliability due to reduced heat generation.
Diagrams
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![]() PBSS5140T |
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![]() Negotiable |
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![]() PBSS5140T T/R |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) PNP 40V 1A |
![]() Data Sheet |
![]() Negotiable |
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![]() PBSS5140T,215 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) PNP 40V 1A |
![]() Data Sheet |
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