Product Summary

The MJE13007 is an NPN bipolar power transistor. The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. The MJE13007 is particularly suited for 115 and 220 V switchmode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.

Parametrics

MJE13007 absolute maximum ratings: (1)Collector–emitter sustaining voltage VCEO: 400 Vdc; (2)Collector–emitter breakdown voltage VCES: 700 Vdc; (3)Emitter–base voltage VEBO: 9.0 Vdc; (4)Collector current — continuous: 8 Adc; (5)Collector current — peak (1): 16 Adc; (6)Base current — continuous: 4 Adc; (7)Base current — peak (1): 8 Adc; (8)Emitter current — continuous: 12 Adc; (9)Emitter current — peak (1): 24 Adc; (10)Total device dissipation @ TC = 25°C: 80 Watts; Derate above 25°C: 0.64 W/°C; (11)Operating and storage temperature TJ, Tstg: – 65 to 150 °C.

Features

MJE13007 features: (1)VCEO(sus)400 V; (2)Reverse bias SOA with inductive loads @ TC = 100°C; (3)700 V blocking capability; (4)SOA and switching applications information; (5)Standard TO–220.

Diagrams

MJE13007 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJE13007
MJE13007
ON Semiconductor
Transistors Bipolar (BJT) 8A 400V 80W NPN
Data Sheet
Negotiable 
MJE13007A
MJE13007A
STMicroelectronics
Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw
Data Sheet
Negotiable 
MJE13007G
MJE13007G
ON Semiconductor
Transistors Bipolar (BJT) 8A 400V 80W NPN
Data Sheet
0-1: $0.59
1-25: $0.47
25-100: $0.36
100-500: $0.32
MJE13007L
MJE13007L
Other

Data Sheet
Negotiable