(Hong Kong)
Product Summary
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
Features
Isolated Package
? High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
? Sink to Lead Creepage Distance = 4.8 mm
? P-Channel
? 175 °C Operating Temperature
? Dynamic dV/dt Rating
? Low Thermal Resistance
? Lead (Pb)-free Available
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 IRFI9Z24G |
Vishay/Siliconix |
MOSFET P-Chan 60V 8.5 Amp |
Data Sheet |
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IRFI9Z24G, SiHFI9Z24G |
Other |
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Data Sheet |
Negotiable |
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IRFI9Z24GPBF |
Vishay/Siliconix |
MOSFET P-Chan 60V 8.5 Amp |
Data Sheet |
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