Product Summary
The FQP3N60C is a channel mosfet. The FQP3N60C n-channel enhancement mode power field effect transistors are produced using fairchild’s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Parametrics
FQP3N60C absolute maximum ratings: (1)vdss drain-source voltage: 600 v; (2)id drain current - continuous (tc = 100°c): 1.8 a; (3)idm drain current - pulsed (note 1): 12 a; (4)vgss gate-source voltage ±30 v; (5)eas single pulsed avalanche energy (note 2): 150 mj; (6)iar avalanche current (note 1): 3 a; (7)ear repetitive avalanche energy (note 1): 7.5 mj; (8)dv/dt peak diode recovery dv/dt (note 3): 4.5 v/ns; (9)pd power dissipation (tc = 25°c)75 w/°c; (10)tj, tstg operating and storage temperature range: -55 to +150 °c; (11)tl maximum lead temperature for soldering purpose, 1/8” from case for 5 seconds: 300°c
Features
FQP3N60C features: (1)3a, 600v, rds(on)= 3.4ω @vgs = 10 v; (2)low gate charge ( typical 10.5 nc); (3)low crss ( typical 5 pf); (4)fast switching; (5)100% avalanche tested; (6)improved dv/dt capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FQP3N60C |
Fairchild Semiconductor |
MOSFET N-CH/600V 3A/3.6OHM |
Data Sheet |
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