(Hong Kong)
Product Summary
The BC327 is a PNP epitaxial silicon transistor. Applications are (1)Suitable for AF-Driver stages and low power output stages; (2)Complement to BC337.
Parametrics
BC327 absolute maximum ratings: (1)Collector-emitter voltage: -50 V; (2)Collector-emitter voltage: -45 V; (3)Emitter-base voltage: -5 V; (4)Collector current (DC): -800 mA; (5)Collector power dissipation: 625 mW; (6)Junction temperature: 150 °C; (7)Storage temperature: -55 to 150 °C.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BC327 AMO |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP AMMO WIDE PITCH |
Data Sheet |
Negotiable |
|
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|
BC327 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE RADIAL |
Data Sheet |
Negotiable |
|
||||
 |
BC327−40 |
Other |
|
Data Sheet |
Negotiable |
|
||||
 |
BC327,116 |
|
TRANSISTOR PNP 45V 500MA TO-92 |
Data Sheet |
Negotiable |
|
||||
|
BC327,126 |
|
TRANSISTOR PNP 45V 500MA TO-92 |
Data Sheet |
Negotiable |
|
||||
|
BC327,412 |
|
TRANSISTOR PNP 45V 500MA TO-92 |
Data Sheet |
Negotiable |
|
||||
 |
BC327_D11Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP -45V -800mA HFE/630 |
Data Sheet |
Negotiable |
|
||||
|
BC327_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP -45V -800mA HFE/63 |
Data Sheet |
Negotiable |
|
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