Product Summary

The AO4806 is a Dual N-Channel Enhancement Mode Field Effect Transistor. The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8Vto 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO4806 is Pb-free (meets ROHS &Sony 259 specifications). The AO4806 electrically identical.

Parametrics

AO4806 absolute maximum ratings: (1)TJ, TSTG Junction and Storage Temperature Range: -55 to 150°C; (2)Power Dissipation, PD: 2W at TA=25°C; 1.28W at TA=70°C; (3)Pulsed Drain Current, IDM: 40A; (4)Continuous Drain Current, ID: 9.4A at TA=25°C; 7.5A at TA=70°C; (5)Drain-Source Voltage, VDS: 20V; (6)Gate-Source Voltage, VGS: ±12V.

Features

AO4806 features: (1)VDS (V) = 20V; (2)ID = 9.4A (VGS = 10V); (3)RDS(ON) < 14mΩ (VGS = 10V); (4)RDS(ON) < 15mΩ (VGS = 4.5V); (5)RDS(ON) < 21mΩ (VGS = 2.5V); (6)RDS(ON) < 30mΩ (VGS = 1.8V); (7)ESD Rating: 2000V HBM.

Diagrams

AO4806 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4806
AO4806

MOSFET DUAL N-CH 20V 9.4A 8-SOIC
Data Sheet
0-1: $0.50
1-25: $0.39
25-100: $0.34
100-250: $0.29
250-500: $0.25
500-1000: $0.20
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4800
AO4800
Other

Data Sheet
Negotiable 
AO4800B
AO4800B

MOSFET DUAL N-CH 30V 6.9A 8-SOIC
Data Sheet
0-1: $0.47
1-25: $0.33
25-100: $0.28
100-250: $0.24
250-500: $0.21
500-1000: $0.16
AO4801
AO4801
Other

Data Sheet
Negotiable 
AO4801A
AO4801A

MOSFET 2P-CH 30V 5A 8SOIC
Data Sheet
0-3000: $0.13
AO4803
AO4803
Other

Data Sheet
Negotiable 
AO4803A
AO4803A

MOSFET DUAL P-CH -30V -5A 8-SOIC
Data Sheet
Negotiable