(Hong Kong)
Product Summary
The AO4720 is an N-channel enhancement mode field effect transistor. The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. The AO4720 is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4720 is Pb-free.
Parametrics
AO4720 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±20 V; (3)Continuous drain current TA=25°C: 13 A; TA=70°C: 10.5 A; (4)Pulsed drain current: 120 A; (5)Power dissipation TA=25°C: 3.1 W; TA=70°C: 2.0 W; (6)Junction and storage temperature range: -55 to 150 °C; (7)Avalanche current: 21 A; (8)Repetitive avalanche energy L=0.3mH: 66 mJ.
Features
AO4720 features: (1)VDS (V)= 30V; (2)ID = 13 A (VGS = 10V); (3)RDS(ON)< 11mΩ (VGS = 10V); (4)RDS(ON)< 17.5mΩ (VGS = 4.5V).
Diagrams
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 AO4720 |
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MOSFET N CH 30V 13A SOIC 8 |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||||||
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AO4720 |
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MOSFET N CH 30V 13A SOIC 8 |
Data Sheet |
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AO4722 |
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MOSF N CH 30V 8.5A SRFET SOIC 8 |
Data Sheet |
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AO4728L |
Other |
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Data Sheet |
Negotiable |
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AO4772 |
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MOSFET N-CH 30V 6A 8SOIC |
Data Sheet |
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AO4771 |
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MOSFET P-CH 30V 4A 8SOIC |
Data Sheet |
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AO4728 |
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MOS N CH 30V 20A SOIC 8 |
Data Sheet |
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