Product Summary

The AO4720 is an N-channel enhancement mode field effect transistor. The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. The AO4720 is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4720 is Pb-free.

Parametrics

AO4720 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±20 V; (3)Continuous drain current TA=25°C: 13 A; TA=70°C: 10.5 A; (4)Pulsed drain current: 120 A; (5)Power dissipation TA=25°C: 3.1 W; TA=70°C: 2.0 W; (6)Junction and storage temperature range: -55 to 150 °C; (7)Avalanche current: 21 A; (8)Repetitive avalanche energy L=0.3mH: 66 mJ.

Features

AO4720 features: (1)VDS (V)= 30V; (2)ID = 13 A (VGS = 10V); (3)RDS(ON)< 11mΩ (VGS = 10V); (4)RDS(ON)< 17.5mΩ (VGS = 4.5V).

Diagrams

AO4720 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4720
AO4720

MOSFET N CH 30V 13A SOIC 8
Data Sheet
0-1: $0.40
1-25: $0.31
25-100: $0.27
100-250: $0.23
250-500: $0.20
500-1000: $0.16
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