(Hong Kong)
Product Summary
The AO4710 is an N-channel enhancement mode field effect transistor. The AO4710 uses advanced trench technology with a monolithically integrated schottky diode to provide excellent RDS(ON),and low gate charge. The AO4710 is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard product AO4710 is Pb-free.
Parametrics
AO4710 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±12 V; (3)Continuous drain current TA=25°C: 12.7 A; TA=70°C: 10 A; (4)Pulsed drain current: 60 A; (5)Power dissipation TA=25°C: 3.1 W; TA=70°C: 2.0 W; (6)Junction and storage temperature range: -55 to 150 °C; (7)Avalanche current: 22 A; (8)Repetitive avalanche energy L=0.3mH: 73 mJ.
Features
AO4710 features: (1)VDS (V)= 30V; (2)ID = 12.7A (VGS = 10V); (3)RDS(ON)< 11.8mΩ (VGS = 10V); (4)RDS(ON)< 14.2mΩ (VGS = 4.5V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 AO4710 |
|
MOSFET N-CH 30V 12.7A 8-SOIC |
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
AO4701 |
|
MOSFET P-CH -30V -5A 8-SOIC |
Data Sheet |
Negotiable |
|
||||
 |
AO4702 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
AO4704 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
AO4706 |
|
MOSFET N-CH 30V 16.5A 8-SOIC |
Data Sheet |
Negotiable |
|
||||
|
AO4708 |
|
MOSFET N-CH 30V 15A 8-SOIC |
Data Sheet |
Negotiable |
|
||||
|
AO4710 |
|
MOSFET N-CH 30V 12.7A 8-SOIC |
Data Sheet |
Negotiable |
|
||||
