Product Summary
The AO4611 is a complementary enhancement mode field effect transistor. The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4611 is Pb-free.
Parametrics
AO4611 absolute maximum ratings: (1)Drain-source voltage: 60 V, -60 V; (2)Gate-source voltage: ±20 V; (3)Continuous drain current TA=25°C: 6.3 A, -4.9 A; TA=70°C: 5 A, -3.9 A; (4)Pulsed drain current: 40 A, -30 A; (5)Power dissipation TA=25°C: 2 W; TA=70°C: 1.28 W; (6)Junction and storage temperature range: -55 to 150 °C.
Features
AO4611 features: (1)N-channel: VDS (V)= 60V ID = 6.3A (VGS=10V); (2)RDS(ON): < 25mΩ (VGS=10V); < 30mΩ (VGS=4.5V); (3)P-channel: -60V; -4.9A (VGS = -10V); (4)RDS(ON): < 42mΩ (VGS = -10V); < 52mΩ (VGS = -4.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4611 |
MOSFET N+P 60V 6.3A/4.9A 8SOIC |
Data Sheet |
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AO4600 |
Other |
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Negotiable |
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AO4601 |
Other |
Data Sheet |
Negotiable |
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AO4604 |
Other |
Data Sheet |
Negotiable |
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AO4606 |
Other |
Data Sheet |
Negotiable |
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AO4607 |
Other |
Data Sheet |
Negotiable |
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AO4609 |
Other |
Data Sheet |
Negotiable |
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