(Hong Kong)
Product Summary
The AO4606 is a Complementary Enhancement Mode Field Effect Transistor. The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Parametrics
AO4606 absolute maximum ratings: (1)Drain-Source Voltage: -30 V; (2)Gate-Source Voltage: ±20 V; (3)Continuous Drain Current: -6 A; (4)Pulsed Drain Current: -30 A; (5)Power Dissipation: 2W; (6)Junction and Storage Temperature Range: -55 to 150 ℃.
Features
AO4606 features: (1)VDS (V): -30V; (2)ID: -6A; (3)RDS(ON): < 35mΩ (VGS = 10V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 AO4606 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||
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AO4600 |
Other |
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Data Sheet |
Negotiable |
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AO4601 |
Other |
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Data Sheet |
Negotiable |
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AO4604 |
Other |
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Data Sheet |
Negotiable |
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AO4606 |
Other |
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Data Sheet |
Negotiable |
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AO4607 |
Other |
|
Data Sheet |
Negotiable |
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AO4609 |
Other |
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Data Sheet |
Negotiable |
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