Product Summary
The AO4468 is a 30V N-Channel MOSFET. The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Parametrics
AO4468 absolute maximum ratings: (1)drain-source voltage: 30V; (2)gate-source voltage: ±20V; (3)continuous drain current: 10.5 or 8.5A; (4)pulsed drain current: 50A; (5)power dissipation: 3.1 or 2.0W; (6)junction and storage temperature range: -55 to 150°C.
Features
AO4468 features: (1)VDS: 30V; (2)ID(at VGS=10V)10.5A; (3)RDS(ON)(at VGS=10V)< 17mΩ; (4)RDS(ON)(at VGS= 4.5V)< 23mΩ.
Diagrams
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![]() AO4468 |
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![]() MOSFET N-CH 30V 11.6A 8-SOIC |
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![]() AO4401 |
![]() Other |
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![]() Negotiable |
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![]() AO4402 |
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![]() MOSFET N-CH 20V 20A 8SOIC |
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![]() AO4403 |
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![]() MOSFET P-CH -30V -6.1A 8-SOIC |
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![]() AO4404 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() AO4404B |
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![]() MOSFET N-CH 30V 8.5A 8-SOIC |
![]() Data Sheet |
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![]() AO4405 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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