Product Summary
The AO4435 is a P-Channel Enhancement Mode Field Effect Transistor. The AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device of the AO4435 is suitable for use as a load switch or in PWM applications. Standard Product AO4435 is Pb-free (meets ROHS & Sony 259 specifications). The AO4435 is a Green Product ordering option.
Parametrics
AO4435 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -30 V; (2)Gate-Source Voltage, VGS: ±25 V; (3)Continuous Drain Current, ID: -10 to -8 A; (4)Pulsed Drain Current, IDM: -80 A; (5)Power Dissipation, PD: 3.1 to 1.7 W; (6)Junction and Storage Temperature Range, TJ: -55 to 150 ℃.
Features
AO4435 features: (1)VDS (V) = -30V; (2)ID = -10 A (VGS = -10V); (3)RDS(ON) < 18mΩ (VGS = -10V); (4)RDS(ON) < 36mΩ(VGS = -5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4435 |
MOSFET P-CH -30V -10.5A 8-SOIC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO4401 |
Other |
Data Sheet |
Negotiable |
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AO4402 |
MOSFET N-CH 20V 20A 8SOIC |
Data Sheet |
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AO4403 |
MOSFET P-CH -30V -6.1A 8-SOIC |
Data Sheet |
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AO4404 |
Other |
Data Sheet |
Negotiable |
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AO4404B |
MOSFET N-CH 30V 8.5A 8-SOIC |
Data Sheet |
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AO4405 |
Other |
Data Sheet |
Negotiable |
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