(Hong Kong)
Product Summary
The AO4420 is an N-channel enhancement mode field effect transistor. The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. The AO4420 is suitable for use as a synchronous switch in PWM applications.
Parametrics
AO4420 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±12 V; (3)Continuous drain current TA=25°C: 13.7 A; TA=70°C: 9.7 A; (4)Pulsed drain current: 60 A; (5)Power dissipation TA=25°C: 3.1 W; TA=70°C: 2 W; (6)Junction and storage temperature range: -55 to 150 °C.
Features
AO4420 features: (1)VDS (V)= 30V; (2)ID = 13.7A; (3)RDS(ON)< 10.5mΩ (VGS = 10V); (4)RDS(ON)< 12mΩ (VGS = 4.5V).
Diagrams
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 AO4420 |
Other |
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Data Sheet |
Negotiable |
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AO4420L |
Other |
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Data Sheet |
Negotiable |
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AO4420A |
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MOSFET N CH 30V 13.7A SOIC 8 |
Data Sheet |
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