Product Summary

The AO4420 is an N-channel enhancement mode field effect transistor. The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. The AO4420 is suitable for use as a synchronous switch in PWM applications.

Parametrics

AO4420 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±12 V; (3)Continuous drain current TA=25°C: 13.7 A; TA=70°C: 9.7 A; (4)Pulsed drain current: 60 A; (5)Power dissipation TA=25°C: 3.1 W; TA=70°C: 2 W; (6)Junction and storage temperature range: -55 to 150 °C.

Features

AO4420 features: (1)VDS (V)= 30V; (2)ID = 13.7A; (3)RDS(ON)< 10.5mΩ (VGS = 10V); (4)RDS(ON)< 12mΩ (VGS = 4.5V).

Diagrams

AO4420 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4420
AO4420
Other

Data Sheet
Negotiable 
AO4420A
AO4420A

MOSFET N CH 30V 13.7A SOIC 8
Data Sheet
0-1: $0.46
1-25: $0.32
25-100: $0.28
100-250: $0.24
250-500: $0.21
500-1000: $0.16
AO4420L
AO4420L
Other

Data Sheet
Negotiable