Product Summary
The AO4410 is an N-channel enhancement mode field effect transistor. The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. The AO4410 is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO4410 is Pb-free.
Parametrics
AO4410 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±20 V; (3)Continuous drain current TA=25°C: 18 A; TA=70°C: 15 A; (4)Pulsed drain current: 80 A; (5)Power dissipation TA=25°C: 3 W; TA=70°C: 2.1 W; (6)Junction and storage temperature range: -55 to 150 °C.
Features
AO4410 features: (1)VDS (V)= 30V; (2)ID = 18A (VGS = 10V); (3)RDS(ON)< 5.5mΩ (VGS = 10V); (4)RDS(ON)< 6.2mΩ (VGS = 4.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4410 |
Other |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO4401 |
Other |
Data Sheet |
Negotiable |
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AO4402 |
MOSFET N-CH 20V 20A 8SOIC |
Data Sheet |
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AO4403 |
MOSFET P-CH -30V -6.1A 8-SOIC |
Data Sheet |
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AO4404 |
Other |
Data Sheet |
Negotiable |
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AO4404B |
MOSFET N-CH 30V 8.5A 8-SOIC |
Data Sheet |
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AO4405 |
Other |
Data Sheet |
Negotiable |
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