Product Summary

The AO4407 is a P-Channel Enhancement Mode Field Effect Transistor. It uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. The AO4407 is suitable for use as a load switch or in PWM applications. Standard Product is Pb-free (meets ROHS & Sony 259 specifications). The AO4407 is electrically identical.

Parametrics

AO4407 absolute maximum ratings: (1)Drain-Source Voltage VDS: -30V; (2)Gate-Source Voltage VGS: ±25V; (3)Continuous Drain Current ID: -12A at TA=25℃; -10A at TA=70℃; (4)Pulsed Drain Current IDM: -60A; (5)Power Dissipation PD: 3W at TA=25℃; 2.1W at TA=70℃; (6)Junction and Storage Temperature Range TJ, TSTG: -55 to 150℃.

Features

AO4407 features: (1)VDS (V) = -30V; (2)ID = -12 A (VGS = -20V); (3)RDS(ON) < 13mΩ (VGS = -20V); (4)RDS(ON) < 14mΩ (VGS = -10V).

Diagrams

AO4407 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4407
AO4407
Other

Data Sheet
Negotiable 
AO4407A
AO4407A

MOSFET P-CH -30V -12A 8-SOIC
Data Sheet
0-1: $0.40
1-25: $0.31
25-100: $0.27
100-250: $0.23
250-500: $0.20
500-1000: $0.16