Product Summary

The AO3416 is an n-channel enhancement mode field effect transistor. The AO3416 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM application. The AO3416 is ESD protected. The AO3416 is offered in a lead-free package.

Parametrics

AO3416 absolute maximum ratings: (1)Drain-Source Voltage: 20 V:; (2)Continuous Drain Current A Parameter Maximum Units TA=25°C: 6.5 A; (3)Power Dissipation A TA=25°C PD: 1.4 W; (4)Junction and Storage Temperature Range TJ , TSTG: -55 to 150°C; (5)Maximum Junction-to-Lead C Steady-State RθJL: 43 to 60°C/W.

Features

AO3416 features: (1)VDS (V)= 20V; (2)ID = 6.5 A; (3)RDS(ON)< 22mΩ (VGS = 4.5V); (4)RDS(ON)< 26mΩ (VGS = 2.5V); (5)RDS(ON)< 34mΩ (VGS = 1.8V); (6)ESD Rating: 2000V HB.

Diagrams

AO3416 v0 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
AO3416
AO3416


MOSFET N-CH 20V 6.5A SOT23

Data Sheet

0-1: $0.33
1-25: $0.22
25-100: $0.18
100-250: $0.15
250-500: $0.12
500-1000: $0.09
AO3416L
AO3416L

Other


Data Sheet

Negotiable