Product Summary
The AO3416 is an n-channel enhancement mode field effect transistor. The AO3416 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM application. The AO3416 is ESD protected. The AO3416 is offered in a lead-free package.
Parametrics
AO3416 absolute maximum ratings: (1)Drain-Source Voltage: 20 V:; (2)Continuous Drain Current A Parameter Maximum Units TA=25°C: 6.5 A; (3)Power Dissipation A TA=25°C PD: 1.4 W; (4)Junction and Storage Temperature Range TJ , TSTG: -55 to 150°C; (5)Maximum Junction-to-Lead C Steady-State RθJL: 43 to 60°C/W.
Features
AO3416 features: (1)VDS (V)= 20V; (2)ID = 6.5 A; (3)RDS(ON)< 22mΩ (VGS = 4.5V); (4)RDS(ON)< 26mΩ (VGS = 2.5V); (5)RDS(ON)< 34mΩ (VGS = 1.8V); (6)ESD Rating: 2000V HB.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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AO3416L |
Other |
Data Sheet |
Negotiable |
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AO3416 |
MOSFET N-CH 20V 6.5A SOT23 |
Data Sheet |
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