Product Summary

The 2N7002 is a Power MOSFET. This MOSFET is the second generation of STMicroelectronics unique “Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. The application of the 2N7002 is Switching application.

Parametrics

2N7002 absolute maximum ratings: (1)Drain-source voltage (VGS = 0): 60 V; (2)Drain-gate voltage (RGS = 20 kΩ): 60 V; (3)Gate- source voltage: ± 18 V; (4)Drain current (continuous) at TC = 25℃: 0.20 A; (5)Drain current (pulsed): 1.4A; (6)PTOT Total dissipation at TC = 25℃: 1W.

Features

2N7002 features: (1)Low Qg; (2)Low threshold drive.

Diagrams

2N7002 dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2N7002
2N7002

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Data Sheet

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