Product Summary

The SKW30N60 is a Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode.

Parametrics

SKW30N60 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200V; (2)DC collector current, IC: 46A at TC =25°C; 25A at TC =100°C; (3)Pulsed collector current, tp limitedby Tjmax, ICpuls: 84A; (4)Turn off safe operating area, VCE ≤ 1200V, Tj≤ 150°C: 84A; (5)Diode forward current, IF: 42A at TC =25°C; 25A at TC =100°C; (6)Diode pulsed current, tp limitedby Tjmax IFpuls: 80A; (7)Gate-emitter voltage VGE: ±20 V; (8)Short circuit with standtime, VGE =15V,100V≤VCC ≤1200V, Tj≤150°C, tSC: 10 us; (9)Power dissipation, TC =25°C, Ptot: 313W; (10)Operating junction and storage temperature Tj, Tstg -55 to +150 °C; (11)Soldering temperature, wave soldering,1.6mm(0.063in. from case for 10s, Ts :260°C.

Features

SKW30N60 features: (1)40lower Eoff compared to previous generation; (2)Short circuit withstand time–10us; (3)Designed for: Motor controls; Inverter; SMPS; (4)NPT-Technology offers: very tight parameter distribution; hig hruggedness, temperature stable behaviour; parallel switching capability; (5)Pb-free lead plating; RoHS compliant; (6)Qualified according to JEDEC1 for target applications; (7)Completep roduct spectrum and PSpice Models.

Diagrams

SKW30N60 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SKW30N60
SKW30N60
Infineon Technologies
IGBT Transistors FAST IGBT NPT TECH 600V 30A
Data Sheet
0-135: $2.92
135-250: $2.69
250-500: $2.45
500-1000: $2.14
SKW30N60HS
SKW30N60HS
Infineon Technologies
IGBT Transistors HIGH SPEED NPT TECH 600V 30A
Data Sheet
0-97: $3.65
97-100: $2.99
100-250: $2.69
250-500: $2.42