(Hong Kong)
Product Summary
The MG200Q2YS65H is an N Channel IGBT.
Parametrics
MG200Q2YS65H absolute maximum ratings: (1)Collector-emitter voltage VCES: 1200 V; (2)Gate-emitter voltage VGES: 20 V; (3)Collector current 1 ms ICP: 400 A; (4)Forward current 1 ms IFM: 400 A; (5)Collector power dissipation (Tc =25°C)PC: 1310 W; (6)Junction temperature Tj: 150 °C; (7)Storage temperature range Tstg: 40 to 125 °C; (8)Isolation voltage VIsol 2500 (AC 1 minute)V; (9)Screw torque Mounting: 3 N▪m .
Features
MG200Q2YS65H features: (1)High input impedance; (2)Enhancement-mode; (3)The electrodes are isolated from case..
Diagrams
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 MG200Q2YS65H |
Other |
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Data Sheet |
Negotiable |
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MG2000 |
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MG2001 |
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MG2002 |
Other |
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Data Sheet |
Negotiable |
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MG2004 |
Other |
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Negotiable |
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MG200J6ES60 |
Other |
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Data Sheet |
Negotiable |
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MG200J6ES61 |
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