Product Summary

The MG200Q1US9 is an IGBT module. Applications are (1)High power switching; (2)Motor control.

Parametrics

MG200Q1US9 absolute maximum ratings: (1)Collector-emitter voltage VCES: 1200 V; (2)Gate-emitter voltage VGES: ±20 V; (3)Collector current DC IC: 200 A; 1ms ICP: 400 A; (4)Forward current DC IF: 200 A; 1ms IFM: 400 A; (5)Collector power dissipation (Tc = 25°C)PC: 1400 W; (6)Junction temperature Tj: 150 °C; (7)Storage temperature range Tstg: -40 to 125 °C; (8)Isolation voltage visol: 2500 (AC 1 min)V; (9)Screw torque terminal: 2 N·m; M4 mounting: 3 N·m; M6 mounting: 3 N·m.

Features

MG200Q1US9 features: (1)High input impedance; (2)High speed: tf = 0.5 μs (max), trr = 0.5 μs (max); (3)Low saturation voltage: VCE (sat)= 4.0 V (max); (4)Enhancement-mode; (5)The electrodes are isolated from case.

Diagrams

MG200Q1US9 pin connection