Product Summary

The MG150N2YS1 is a silicon N channel IGBT.

Parametrics

MG150N2YS1 absolute maximum ratings: (1)VCES: 1000 V; (2)VGES: ±20 V; (3)IC: 150 A; (4)ICP: 300A; (5)IF: 150 A; (6)IFM: 300 A; (7)PC: 800 W; (8)Tj: 150 ℃; (9)Tstg: -40 to 125℃; (10)VIsol: 2500V.

Features

MG150N2YS1 features: (1)Electrodes are isolated from the heat sink; (2)High DC current gain; (3)Low saturation voltage; (4)Wide safe operating area.

Diagrams

MG150N2YS1 plackage dimensions