Product Summary
The FF200R33KF2C is an IGBT module.
Parametrics
FF200R33KF2C absolute maximum ratings: (1)Collector-emitter voltage:3300V; (2)DC-collector current:TC=80℃:200A, TC=25℃:330A; (3)Repetitive peak collector current:400A; (4)Total power dissipation:2.20kW; (5)Gate-emitter peak voltage:±20V.
Features
FF200R33KF2C features: (1)Gate charge:4uC; (2)Internal gate resistor:2.5Ω; (3)Input capacitance:25.0nF; (4)Reverse transfer capacitance:1.40nF; (5)Collector-emitter cut-off current:5.0mA; (6)Gate-emitter leakage current:400nA; (7)SC data:1000A; (8)Thermal resistance, junction to case:57.0K/kw; (9)Thermal resistance, case to heatsink:49.0K/kw.
Diagrams
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![]() IGBT Transistors 3300V 200A DUAL |
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