Product Summary

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for industrial and military
applications in the HF/VHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT121 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.

Features

? High power gain
? Low intermodulation distortion
? Easy power control
? Good thermal stability
? Withstands full load mismatch.