Product Summary

The 2MBI300U4H-120 is an insulated gate bipolar transistor.

Parametrics

2MBI300U4H-120 absolute maximum ratings: (1)Collector-emitter voltage, Vces: 1200V; (2)Gate -emitter voltage, Vges: ±20V; (3)Collector current: Continuous: Tc=25℃ IC: 400A; Tc=80℃, IC: 300A; 1ms: Tc=25℃, Icp: 800A; Tc=80℃, Icp: 600A; -IC: 300A; 1ms, -Ic pulse: 600A; (4)Collector Power Dissipation, 1 device, Pc: 1470W; (5)Junction temperature, Tj: +150 ℃; (6)Storage temperature, Tstg: -40 to +125 ℃; (7)Isolation voltage, between terminal and copper base, AC: 1min., Viso: 2500 VAC; (8)Screw torque, mounting: 3.5Nm; Terminals: 4.5Nm.

Features

2MBI300U4H-120 features: (1)Square RBSOA; (2)Low saturation voltage; (3)Less total power dissipation; (4)Improved FWD characteristic; (5)Minimized internal stray inductance; (6)Overcurrent limiting function (~3 times rated current).

Diagrams

2MBI300U4H-120 pin connection

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