(Hong Kong)
Product Summary
The 2mbi150s-120 is an IGBT module. The 2mbi150s-120 should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .
Parametrics
2mbi150s-120 absolute maximum ratings: (1) Collector-Emitter voltage VCES: 1200V; (2) Gate-Emitter voltage VGES: ±20V; (3) Collector current Ic: 150A (Tc=25°C) , 100A (Tc=80°C) , 300A (Tc=25°C, 1ms) , 200A (Tc=80°C) ; (4) Collector Power Dissipation Pc: 540W (1 device) ; (5) +150TjJunction temperature Tj: +150°C; (6) Storage temperature Tstg: -40 to +150°C; (7) Isolation voltage Viso: 2500VAC (AC: 1min. between terminal and copper base) .
Features
2mbi150s-120 electrical characteristics: (1) Zero gate voltage collector current ICES: 1mA (VCE=1200Vm VGE=0V) ; (2) Gate-Emitter leakage current IGES: 200nA (VCE=0V, VGE=±20V) ; (3) Gate-Emitter threshold voltage VCE (th) : 4.5 to 8.5V (VCE=20V, Ic=100mA) ; (4) Collector-Emitter saturation voltage VCE (sat) terminal: 2.05 to 2.2V (Tj=25°C) , 2.25V (Tj=125°C) , VCE (sat) (chip) : 1.9 to 2.05V (Tj=25°C) , 2.1V (Tj=125°C) .
Diagrams
| Image | Part No | Mfg | Description |  |
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 2MBI150S-120 |
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Data Sheet |
Negotiable |
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2MBI100N-060-03 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NB-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NC-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NE-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100P-140 |
Other |
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Data Sheet |
Negotiable |
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2MBI100PC-140 |
Other |
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Data Sheet |
Negotiable |
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