Product Summary
The UPA843TC-T1 is an NPN silicon RF transistor.
Parametrics
UPA843TC-T1 absolute maximum ratings: (1)Collector to Base Voltage VCBO: 15 to 9 V; (2)Collector to Emitter Voltage VCEO: 6 to 5.5 V; (3)Emitter to Base Voltage VEBO: 2 to 1.5 V; (4)Collector Current IC: 35 to 100 mA; (5)Total Power Dissipation Ptot: 200 in 1 element; 230 in 2 elements mW; (6)Junction Temperature Tj: 150 ℃; (7)Storage Temperature Tstg: -65 to +150 ℃.
Features
UPA843TC-T1 features: (1)Flat-lead 6-pin thin-type ultra super minimold package; (2)2 different built-in transistors (2SC5603, 2SC5600); (3)Low voltage operation.
Diagrams
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![]() UPA843TC-T1 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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Image | Part No | Mfg | Description | ![]() |
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![]() UPA800T |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() UPA800T-A |
![]() CEL |
![]() Transistors RF Bipolar Small Signal NPN Silicn AMP Oscilltr Twn Trnst |
![]() Data Sheet |
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![]() UPA800TF |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() UPA800T-T1 |
![]() CEL |
![]() Transistors RF Bipolar Small Signal DISC BY CEL 2/02 SO-6 NPN HI-FREQ |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() UPA800T-T1-A |
![]() CEL |
![]() Transistors RF Bipolar Small Signal NPN Silicn AMP Oscilltr Twn Trnst |
![]() Data Sheet |
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![]() UPA801T |
![]() NEC/CEL |
![]() Transistors RF Bipolar Small Signal NPN High Frequency |
![]() Data Sheet |
![]() Negotiable |
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