(Hong Kong)
Product Summary
The UPA800T-T1 is a high-frequency low noise amplifier NPN silicon epitaxial transistor with built-in 2 elements mini mold designed to amplify low noise in the VHF band to the UHF band.
Parametrics
UPA800T-T1 absolute maximum ratings: (1)Collector to Base Voltage, VCBO: 20 V; (2)Collector to Emitter Voltage, VCEO: 10 V; (3)Emitter to Base Voltage, VEBO: 1.5 V; (4)Collector Current, IC: 35 mA; (5)Total Power Dissipation, PT: 150 in 1 element mW; 200 in 2 elements mW; (6)Junction Temperature, Tj: 150℃; (7)Storage Temperature, Tstg: -65 to +150℃.
Features
UPA800T-T1 features: (1)Low Noise, NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA; (2)High Gain, |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA; (3)A Mini Mold Package Adopted; (4)Built-in 2 Transistors (2× 2SC4228).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 UPA800T-T1 |
CEL |
Transistors RF Bipolar Small Signal DISC BY CEL 2/02 SO-6 NPN HI-FREQ |
Data Sheet |
Negotiable |
|
||||||
|
UPA800T-T1-A |
CEL |
Transistors RF Bipolar Small Signal NPN Silicn AMP Oscilltr Twn Trnst |
Data Sheet |
|
|
||||||
