TPCA8103

TPCA8103, Silicon P Channel MOS Type Transistor, QFN, ±20 V, 45 W, 208 mJ, Toshiba Semiconductor

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Price:: US $1.00~3.00 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 500 :	3.00 / Piece
501 ~ 1000 :	2.00 / Piece
1001 ~ 3000 :	1.00 / Piece

PartNumber:: TPCA8103

Brand:: Toshiba Semiconductor - Toshiba | Pack: QFN | D/C: 13+

Availability:: Supply Ability: 1/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2013-05-25

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Part Number:TPCA8103
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Product Summary

The TPCA8103 is a Silicon P Channel MOS Type Transistor.

Parametrics

TPCA8103 absolute maximum ratings: (1)Drain-source voltage, VDSS: -30 V; (2)Drain-gate voltage (RGS = 20 kΩ), VDGR: -30 V; (3)Gate-source voltage VGSS: ±20 V; (4)Drain current, DC (Note 1) ID: -40A; Pulsed (Note 1) IDP: -120A; (5)Drain power dissipation (Tc=25℃), PD: 45 W; (6)Drain power dissipation (t = 10 s), PD: 2.8 W; (7)Drain power dissipation (t = 10 s), PD: 1.6 W; (8)Single pulse avalanche energy, EAS: 208 mJ; (9)Avalanche current IAR: -40 A; (10)Repetitive avalanche energy(Tc=25℃), EAR: 4.5 mJ; (11)Channel temperature, Tch: 150℃; (12)Storage temperature range, Tstg: -55 to 150℃.

Features

TPCA8103 features: (1)Small footprint due to small and thin package; (2)Low drain-source ON resistance: RDS (ON) = 3.1 mΩ(typ.); (3)High forward transfer admittance: |Yfs| =45S (typ.); (4)Low leakage current: IDSS = -10μA (max) (VDS = -30 V); (5)Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA).