Product Summary

The TLP781GB is a photocoupler. The TLP781GB consists of a silicone photo transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min)).

Parametrics

TLP781GB absolute maximum ratings: (1)Forward Current: 60 mA; (2)Forward Current Derating: -0.7 (Ta≥53℃) mA/℃; (3)Pulse Forward Current: 1 A; (4)Reverse Voltage: 5 V; (5)Junction Temperature: 125 ℃; (6)Collector-Emitter Voltage: 80 V; (7)Emitter-Collector Voltage: 7 V; (8)Collector Current: 50 mA; (9)Collector Power Dissipation: 150 mW; (10)Collector Power Dissipation Derating(Ta≥25℃: -1.5 mW /℃.

Features

TLP781GB features: (1)TLP781: 7.62mm pitch type DIP4; (2)TLP781F: 10.16mm pitch type DIP4; (3)Collector-emitter voltage: 80V (min.); (4)Current transfer ratio: 50% (min.) Rank GB: 100% (min.); (5)Isolation voltage: 5000Vrms (min.); (6)UL recognized: UL1577, file No. E67349; (7)BSI approved: BS EN60065:2002, Approved no.8961, BS EN60950-1:2006, Approved no.8962; (8)SEMKO approval: EN60950-1,EN60065 under plan.

Diagrams

TLP781GB pin connection