(Hong Kong)
Product Summary
The TC58NVGOS3ETA00 is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks. The TC58NVGOS3ETA00 has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58NVGOS3ETA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
Parametrics
TC58NVGOS3ETA00 absolute maximum ratings: (1)Power Supply Voltage: -0.6 to 4.6 V; (2)Input Voltage: -0.6 to 4.6 V; (3)Input /Output Voltage: −0.6 V to VCC + 0.3 V (≤ 4.6 V)V; (4)Power Dissipation: 0.3 W; (5)Soldering Temperature (10 s): 260 °C; (6)Storage Temperature: -55 to 150 °C; (7)Operating Temperature: 0 to 70 °C.
Features
TC58NVGOS3ETA00 features: (1)Organization: Memory cell array 2112 × 64K × 8; Register 2112 × 8 Page size 2112 bytes; Block size (128K + 4K)bytes; (2)Modes: Read, Reset, Auto Page Program; Auto Block Erase, Status Read; (3)Mode control: Serial input/output; Command control; (4)Powersupply VCC = 2.7 V to 3.6 V; (5)Program/Erase Cycles 1E5 Cycles (With ECC); (6)Access time: Cell array to register 25 μs max; Serial Read Cycle 50 ns min; (7)Operating current: Read (50 ns cycle)10 mA typ; Program (avg.)10 mA typ; Erase (avg.)10 mA typ; Standby 50 μA max.
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