SXA-389Z

SXA-389Z, amplifier, 6.0 V, 240 mA, 1500 mW, SOT

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Price:: US $0.60~0.80 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 1000 :	0.80 / Piece
1001 ~ 10000 :	0.70 / Piece
10001 ~ 100000 :	0.60 / Piece

PartNumber:: SXA-389Z

Brand:: RF Micro Devices - RFMD | Pack: SOT | D/C: 13+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-04

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Part Number:SXA-389Z
US $0.60 - 0.80
Quantity:

piece

Product Summary

The SXA-389Z is an amplifier. It is high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. The SXA-389Z is fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. The amplifiers is specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-CDMA applications. Applications are (1)W-CDMA, PCS, Cellular Systems; (2)High Linearity IF Amplifiers; (3)Multi-Carrier Applications.

Parametrics

SXA-389Z absolute maximum ratings: (1)Max. Supply Current (ID): 240 mA; (2)Max. Device Voltage (V CC): 6.0 V; (3)Max. Power Dissipation: 1500 mW; (4)Max. RF Input Power: 100 mW; (5)Max. Junction Temp. (TJ): +165 ºC; (6)Operating Lead Temp. (TL): -40 to +85 ºC; (7)Max. Storage Temp: +150 ºC.

Features

SXA-389Z features: (1)On-chip Active Bias Control, Single 5V Supply; (2)High Output 3rd Order Intercept: +42 to +44 dBm typ; (3)High P1dB : +25 dBm typ.; (4)High Gain: +19 dB at 850 MHz; (5)High Efficiency: consumes only 600 mW; (6)Patented High Reliability GaAs HBT Technology; (7)Surface-Mountable Power Plastic Package.