SI7456DP-T1-E3

SI7456DP-T1-E3, N-Channel 100-V (D-S) MOSFET, 9.3A, 1.0W, SO-8

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Price:: US $0.30~0.50 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 1000 :	0.50 / Piece
1001 ~ 10000 :	0.40 / Piece
10001 ~ 100000 :	0.30 / Piece

PartNumber:: SI7456DP-T1-E3

Brand:: Vishay Siliconix - vishay | Pack: SOIC | D/C: 13+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-07-18

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Part Number:SI7456DP-T1-E3
US $0.30 - 0.50
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piece

Product Summary

The SI7456DP-T1-E3 is an N-Channel 100-V (D-S) MOSFET. The applications of it are Primary Side Switch for High Density DC/DC, Telecom/Server 48-V, Full-/Half-Bridge DC/DC, Industrial and 42-V Automotive.

Parametrics

SI7456DP-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 100V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current (TJ = 150°C)TA = 25°C: 9.3 or 5.7A; (4)Continuous Drain Current (TJ = 150°C)TA = 85°C: 6.7 or 4.1A; (5)Pulsed Drain Current IDM: 40A; (6)Avalanche Current L = 0 1 mH IAS: 30mJ; (7)Single Avalanche Energy (Duty Cycle 1%)L = 0.1 mH EAS: 45 mJ; (8)Continuous Source Current (Diode Conduction): 4.3 or 1.6 A; (9)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to 150°C.

Features

SI7456DP-T1-E3 features: (1)TrenchFET Power MOSFETS; (2)New Low Thermal Resistance PowerPAK Package with Low 1.07-mm Profile; (3)PWM Optimized for Fast Switching; (4)100% Rg Tested.